PDTD123ES,126
TRANS PREBIAS NPN 50V TO92-3
PDTD123ES,126 Specifications
Part Status：
Obsolete
Mounting Type：
Through Hole
Power - Max：
500 mW
Supplier Device Package：
TO-92-3
Voltage - Collector Emitter Breakdown (Max)：
50 V
Current - Collector (Ic) (Max)：
500 mA
Package / Case：
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current - Collector Cutoff (Max)：
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce：
40 @ 50mA, 5V
Transistor Type：
NPN - Pre-Biased
Resistors Included：
R1 and R2
Resistor - Base (R1)：
2.2 kOhms
Resistor - Emitter Base (R2)：
2.2 kOhms
Vce Saturation (Max) @ Ib, Ic：
300mV @ 2.5mA, 50mA
