PQMD12Z
TRANS PREBIAS 1NPN 1PNP 6DFN
PQMD12Z Specifications
Part Status：
Active
Mounting Type：
Surface Mount
Power - Max：
350mW
Current - Collector Cutoff (Max)：
100nA (ICBO)
Current - Collector (Ic) (Max)：
100mA
Voltage - Collector Emitter Breakdown (Max)：
50V
Resistor - Base (R1)：
47kOhms
Resistor - Emitter Base (R2)：
47kOhms
Transistor Type：
1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic：
150mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce：
80 @ 5mA, 5V
Package / Case：
6-XFDFN Exposed Pad
Frequency - Transition：
230MHz, 180MHz
Supplier Device Package：
DFN1010B-6
