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home page > CLASSIFICATION > Classification List > product details
PBSS5630PA,115
NEXPERIA PBSS5630PA - SMALL SIGN
part Number：
PBSS5630PA,115
manufacturer：
NXP
category：
Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors >
describe：
NEXPERIA PBSS5630PA - SMALL SIGN
RoHS：
NO
：
PBSS5630PA,115 specifications
Mounting Type：
Surface Mount
Power - Max：
2.1 W
Operating Temperature：
150°C (TJ)
Transistor Type：
PNP
Current - Collector Cutoff (Max)：
100nA
Frequency - Transition：
80MHz
Voltage - Collector Emitter Breakdown (Max)：
30 V
Current - Collector (Ic) (Max)：
6 A
Package / Case：
3-PowerUDFN
Supplier Device Package：
3-HUSON (2x2)
Vce Saturation (Max) @ Ib, Ic：
350mV @ 300mA, 6A
DC Current Gain (hFE) (Min) @ Ic, Vce：
190 @ 2A, 2V
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