BUK9E1R8-40E,127

MOSFET N-CH 40V 120A I2PAK

BUK9E1R8-40E,127
Part Number:
BUK9E1R8-40E,127
Manufacturer:
NXP USA Inc.
Description:
MOSFET N-CH 40V 120A I2PAK
RoHS:
YES
Datasheet:
PDF
Manufacturer Standard Lead Time:
TBD
Standard Pack Quantity:
0

BUK9E1R8-40E,127 Specifications

Mounting Type:
Through Hole
Part Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Vgs (Max):
±10V
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Supplier Device Package:
I2PAK
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Drain to Source Voltage (Vdss):
40 V
Gate Charge (Qg) (Max) @ Vgs:
120 nC @ 5 V
Rds On (Max) @ Id, Vgs:
1.7mOhm @ 25A, 10V
Power Dissipation (Max):
349W (Tc)
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds:
16400 pF @ 25 V

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