PMDPB28UN,115
MOSFET 2N-CH 20V 4.6A 6HUSON
PMDPB28UN,115 Specifications
Part Status：
Obsolete
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
20V
Vgs(th) (Max) @ Id：
1V @ 250µA
Configuration：
2 N-Channel (Dual)
FET Feature：
Logic Level Gate
Current - Continuous Drain (Id) @ 25°C：
4.6A
Package / Case：
6-UDFN Exposed Pad
Input Capacitance (Ciss) (Max) @ Vds：
265pF @ 10V
Supplier Device Package：
6-HUSON (2x2)
Power - Max：
510mW
Gate Charge (Qg) (Max) @ Vgs：
4.7nC @ 4.5V
Rds On (Max) @ Id, Vgs：
37mOhm @ 4.6A, 4.5V
