PMDPB65UP,115
MOSFET 2P-CH 20V 3.5A 6HUSON
PMDPB65UP,115 Specifications
Part Status：
Obsolete
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
150°C (TJ)
Drain to Source Voltage (Vdss)：
20V
Vgs(th) (Max) @ Id：
1V @ 250µA
FET Feature：
Logic Level Gate
Configuration：
2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C：
3.5A
Gate Charge (Qg) (Max) @ Vgs：
6nC @ 4.5V
Package / Case：
6-UDFN Exposed Pad
Power - Max：
520mW
Rds On (Max) @ Id, Vgs：
70mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds：
380pF @ 10V
Supplier Device Package：
6-HUSON (2x2)
