PMWD19UN,518
MOSFET 2N-CH 30V 5.6A 8TSSOP
PMWD19UN,518 Specifications
Part Status：
Obsolete
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
Configuration：
2 N-Channel (Dual)
FET Feature：
Logic Level Gate
Drain to Source Voltage (Vdss)：
30V
Package / Case：
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：
8-TSSOP
Vgs(th) (Max) @ Id：
700mV @ 1mA
Current - Continuous Drain (Id) @ 25°C：
5.6A
Rds On (Max) @ Id, Vgs：
23mOhm @ 3.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs：
28nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：
1478pF @ 10V
Power - Max：
2.3W
