PMWD26UN,518
MOSFET 2N-CH 20V 7.8A 8TSSOP
PMWD26UN,518 Specifications
Part Status：
Obsolete
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
20V
Configuration：
2 N-Channel (Dual)
FET Feature：
Logic Level Gate
Package / Case：
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：
8-TSSOP
Current - Continuous Drain (Id) @ 25°C：
7.8A
Vgs(th) (Max) @ Id：
700mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs：
23.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：
1366pF @ 16V
Power - Max：
3.1W
Rds On (Max) @ Id, Vgs：
30mOhm @ 3.5A, 4.5V
