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Transistors à effet de champ (FET) individuels, transistors MOSFET

PMCM6501VNEZ
PMCM6501VNEZ
NXP USA Inc.
Description
PMCM6501VNE - 12V, N-CHANNEL TRE
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PSMN2R6-60PSQ
PSMN2R6-60PSQ
NXP USA Inc.
Description
NOW NEXPERIA PSMN2R6-60PSQ - 150
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PH5830DLX
PH5830DLX
NXP USA Inc.
Description
PH5830 - N-CHANNEL TRENCHMOS LOG
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NX3008NBKMB315
NX3008NBKMB315
NXP USA Inc.
Description
NOW NEXPERIA NX3008NBKMB SMALL S
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PSMN020-30MLCX
PSMN020-30MLCX
NXP USA Inc.
Description
TRANSISTOR >30MHZ
Quantité
PH1030DLSX
PH1030DLSX
NXP USA Inc.
Description
POWER MOS
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PMCM6501UNEZ
PMCM6501UNEZ
NXP USA Inc.
Description
PMCM6501UNE - 20V, N-CHANNEL TRE
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BUK964R2-55B/C
BUK964R2-55B/C
NXP USA Inc.
Description
N-CHANNEL TRENCHMOS LOGIC LEVEL
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PSMN7R8-120ESQ
PSMN7R8-120ESQ
NXP USA Inc.
Description
POWER FIELD-EFFECT TRANSISTOR, 7
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PSMN8R5-100ESQ
PSMN8R5-100ESQ
NXP USA Inc.
Description
POWER FIELD-EFFECT TRANSISTOR, 1
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PMCM6501VNEZ
PMCM6501VNEZ
NXP USA Inc.
PMCM6501VNE - 12V, N-CHANNEL TRE
Quantité
PSMN2R6-60PSQ
PSMN2R6-60PSQ
NXP USA Inc.
NOW NEXPERIA PSMN2R6-60PSQ - 150
Quantité
PH5830DLX
PH5830DLX
NXP USA Inc.
PH5830 - N-CHANNEL TRENCHMOS LOG
Quantité
NX3008NBKMB315
NX3008NBKMB315
NXP USA Inc.
NOW NEXPERIA NX3008NBKMB SMALL S
Quantité
PSMN020-30MLCX
PSMN020-30MLCX
NXP USA Inc.
TRANSISTOR >30MHZ
Quantité
PH1030DLSX
PH1030DLSX
NXP USA Inc.
POWER MOS
Quantité
PMCM6501UNEZ
PMCM6501UNEZ
NXP USA Inc.
PMCM6501UNE - 20V, N-CHANNEL TRE
Quantité
BUK964R2-55B/C
BUK964R2-55B/C
NXP USA Inc.
N-CHANNEL TRENCHMOS LOGIC LEVEL
Quantité
PSMN7R8-120ESQ
PSMN7R8-120ESQ
NXP USA Inc.
POWER FIELD-EFFECT TRANSISTOR, 7
Quantité
PSMN8R5-100ESQ
PSMN8R5-100ESQ
NXP USA Inc.
POWER FIELD-EFFECT TRANSISTOR, 1
Quantité
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