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Transistors à effet de champ (FET) individuels, transistors MOSFET

BUK9C2R2-60EJ
BUK9C2R2-60EJ
NXP USA Inc.
Description
MOSFET N-CH 60V D2PAK-7
Quantité
BUK7C1R2-40EJ
BUK7C1R2-40EJ
NXP USA Inc.
Description
MOSFET N-CH 40V D2PAK-7
Quantité
PSMN8R5-100XSQ
PSMN8R5-100XSQ
NXP USA Inc.
Description
MOSFET N-CH 100V 49A TO220F
Quantité
PSMN4R6-100XS,127
PSMN4R6-100XS,127
NXP USA Inc.
Description
MOSFET N-CH 100V 70.4A TO220F
Quantité
PMV170UN,215
PMV170UN,215
NXP USA Inc.
Description
MOSFET N-CH 20V 1A TO236AB
Quantité
PMV185XN,215
PMV185XN,215
NXP USA Inc.
Description
MOSFET N-CH 30V 1.1A TO236AB
Quantité
PMPB12UN,115
PMPB12UN,115
NXP USA Inc.
Description
MOSFET N-CH 20V 7.9A 6DFN
Quantité
NX3020NAKT,115
NX3020NAKT,115
NXP USA Inc.
Description
MOSFET N-CH 30V 180MA SC75
Quantité
BUK9E1R8-40E,127
BUK9E1R8-40E,127
NXP USA Inc.
Description
MOSFET N-CH 40V 120A I2PAK
Quantité
BUK961R7-40E,118
BUK961R7-40E,118
NXP USA Inc.
Description
MOSFET N-CH 40V 120A D2PAK
Quantité
BUK9C2R2-60EJ
BUK9C2R2-60EJ
NXP USA Inc.
MOSFET N-CH 60V D2PAK-7
Quantité
BUK7C1R2-40EJ
BUK7C1R2-40EJ
NXP USA Inc.
MOSFET N-CH 40V D2PAK-7
Quantité
PSMN8R5-100XSQ
PSMN8R5-100XSQ
NXP USA Inc.
MOSFET N-CH 100V 49A TO220F
Quantité
PSMN4R6-100XS,127
PSMN4R6-100XS,127
NXP USA Inc.
MOSFET N-CH 100V 70.4A TO220F
Quantité
PMV170UN,215
PMV170UN,215
NXP USA Inc.
MOSFET N-CH 20V 1A TO236AB
Quantité
PMV185XN,215
PMV185XN,215
NXP USA Inc.
MOSFET N-CH 30V 1.1A TO236AB
Quantité
PMPB12UN,115
PMPB12UN,115
NXP USA Inc.
MOSFET N-CH 20V 7.9A 6DFN
Quantité
NX3020NAKT,115
NX3020NAKT,115
NXP USA Inc.
MOSFET N-CH 30V 180MA SC75
Quantité
BUK9E1R8-40E,127
BUK9E1R8-40E,127
NXP USA Inc.
MOSFET N-CH 40V 120A I2PAK
Quantité
BUK961R7-40E,118
BUK961R7-40E,118
NXP USA Inc.
MOSFET N-CH 40V 120A D2PAK
Quantité
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